UMS CHA6682-QKB GaN HPA in QFN package

United Monolithic Semiconductors (UMS) – Advanced-Information CHA6682-QKB – HPA 24-27.5GHz 4W GaN Monolithic Microwave IC in QFN package

The CHA6682-QKB is a three-stage GaN High Power Amplifier in the frequency band 24-27.5GHz.

This HPA typically provides 4W output power associated to 26% of Power Added Efficiency. The circuit exhibits a typical small signal gain of 25dB.

The overall power supply is 20V/140mA. It includes a RF output power detector.

This HPA is dedicated to telecommunication applications and well suited for a wide range of microwave applications and systems including 5G, Satcom and Radar.

The product is developed on a robust GaN on SiC HEMT process and is available in QFN plastic package. The input and output are matched to 50Ω and integrate ESD RF protection.

Access Datasheet via UMS website here
Datasheet reference: AI22144086

United Monolithic Semiconductors S.A.S.
Bât. Charmille – Parc Mosaic – 10, Avenue du Québec – 91140 VILLEBON-SUR-YVETTE – France
Tel.: +33 (0) 1 69 86 32 00 – www.ums-rf.com

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