UMS join the 2021 Mobile World Congress From 28th of June to 1st of July 2021, UMS participate to the MWC Discover UMS latest solutions for 5G and Satcom READ MORE … NIGAMIL a project to develop a European GaN source UMS is proud to have been entrusted by the French Defence Agency (DGA)…
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Major news are : NXmap3.5.0.4 available from https://download.nanoxplore.com NG-Medium QML-V CQFP-352 qualification datapack has been submitted to DLA for approval as well as the SMD 5962F20217. The one related to CLGA-625 will follow. NG-Large CLGA-1752 ESCC qualification is still running with completion expected H1CY22, NX will perform an ECSS-Q-ST-70-61 evaluation of both CCGA-625 and CCGA-1752 PCB…
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Space Components News from Renesas/Intersil, NanoXplore, Semicoa, Reflex Photonics and AirBorn. Renesas (Intersil) – ISL71934M – Radiation Tolerant SP2T RF Switch, 50MHz to 6GHz Renesas (Intersil) – ISL73141SEH – Radiation Tolerant 14-Bit 1MSPS SAR ADC NanoXplore – RadHard FPGA News SEMICOA – Rad Hard Transistors AirBorn – Macro D, Micro D, & Nano D connectors…
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United Monolithic Semiconductors (UMS), European leader RF MMIC – Monolithic Microwave Integrated Circuit (GaAs, GaN, SiGe technologies) products and foundry services for Aerospace, Defence, Telecom, Automotive Radar and Industrial sensors. CHA8212-99F 25W X-Band High Power Amplifier Ref: CHA8212-99F-FULL-0358 (Ex AI1908) Product information: 25W X-Band GaN High Power Amplifier Very versatile amplifier 44dBm Pout @ 20dBm…
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UMS will be present @ the EuMW 2020 edition which held on line from the 10th to the 15th of January. UMS will be pleased to welcome you on our virtual booth (Exhibit Hall 4) and exchange with you on our latest solutions and innovations. UMS will also contribute to the EuMW event with the…
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Obsolescence is the state of being which occurs when an object, service, or practice is no longer wanted even though it may still be in good working order. Electronic Companies organization Designs, Manufactures, Supplies, Services or uses Systems or Equipment that are designed to provide years of reliable service, the chances are that your organization…
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The CHK8013-99F is a new GaN wideband capability transistor covering DC to 10GHz It exhibits 14W of power and a very good PAE of 70%. It enables as much as 17dB gain and a consumption as low as 180mA @30V. Designers can use the CHK8013-99F in Pulsed and operating modes. This product requires an external…
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UMS announced the release of its new GaN HEMT 0.15µm technology during the EuMW show in Paris, GH15 is based on SiC substrate and is well-suited for a wide range of Military, Space and Telecom applications up to 35GHz. It enables the design of high power, high linearity and high PAE products. This technology exhibits…
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