Generic Specification for Discrete Microwave Semiconductor Components This specification defines the general requirements for the qualification, qualification maintenance, procurement, and delivery of hermetically sealed, packaged and die, discrete microwave, semiconductor components for space applications. This specification contains the appropriate inspection and test schedules and also specifies the data documentation requirements. Last version link on ESCIES
Monolithic microwave integrated circuit, or MMIC is an Integrated Circuit (IC) device that operates at Microwave frequencies (300 MHz to 300 GHz). Perform functions such as High Power Amplifiers (HPA), Low-Noise Amplifiers (LNA) and Single Pole Double Throw (SPDT) Switch. MMICs are dimensionally small (from around 1 mm² to 10 mm²) and can be mass-produced,…
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UMS join the 2021 Mobile World Congress From 28th of June to 1st of July 2021, UMS participate to the MWC Discover UMS latest solutions for 5G and Satcom READ MORE … NIGAMIL a project to develop a European GaN source UMS is proud to have been entrusted by the French Defence Agency (DGA)…
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United Monolithic Semiconductors (UMS), European leader RF MMIC – Monolithic Microwave Integrated Circuit (GaAs, GaN, SiGe technologies) products and foundry services for Aerospace, Defence, Telecom, Automotive Radar and Industrial sensors. CHA8212-99F 25W X-Band High Power Amplifier Ref: CHA8212-99F-FULL-0358 (Ex AI1908) Product information: 25W X-Band GaN High Power Amplifier Very versatile amplifier 44dBm Pout @ 20dBm…
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UMS will be present @ the EuMW 2020 edition which held on line from the 10th to the 15th of January. UMS will be pleased to welcome you on our virtual booth (Exhibit Hall 4) and exchange with you on our latest solutions and innovations. UMS will also contribute to the EuMW event with the…
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UMS (United Monolitichs Semiconductors) develops its state of the art LNA offer with the CHA2595-QDG a new wideband and very low noise LNA covering 4 telecom bands. This 27.5-43.5GHz LNA exhibits very low noise @ 2.3dB and low consumption at 3.3V@61mA. It is proposed in a low cost 4x4mm2 QFN plastic package. This circuit…
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A Monolithic Microwave Integrated Circuit, or MMIC is a type of integrated circuit (IC) device that operates at microwave frequencies (300 MHz to 300 GHz) and fabricated using gallium arsenide (GaAs), a III-V compound semiconductor. These devices typically perform functions such as microwave mixing, power amplification, low-noise amplification, and high-frequency switching. Inputs and outputs on MMIC…
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UMS announced the release of its new GaN HEMT 0.15µm technology during the EuMW show in Paris, GH15 is based on SiC substrate and is well-suited for a wide range of Military, Space and Telecom applications up to 35GHz. It enables the design of high power, high linearity and high PAE products. This technology exhibits…
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