United Monolithic Semiconductors (UMS) – European leader in RF MMIC – Monolithic Microwave Integrated Circuit (GaAs, GaN, SiGe technologies) publishes a 6-bit digital X-Band phase shifter, the CHP4010-99F (7-9GHz). This product is proposed in bare die. The CHP4010-99F circuit exhibits a high phase accuracy with a RMS phase error of 1.5°, a phase shift range…
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United Monolithic Semiconductors (UMS) RF MMIC – Monolithic Microwave (GaAs, GaN, SiGe) products and foundry services announce the release of : CHA3409-98F a new wideband driver UMS new CHA3409-98F is a 25-45GHz wideband driver including self-biasing to reduce temperature impact The CHA3409-98F exhibits and excellent PAE of 19% @ 1dBcomp with 19dBm Pout, a high linear gain…
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The CHK8013-99F is a new GaN wideband capability transistor covering DC to 10GHz It exhibits 14W of power and a very good PAE of 70%. It enables as much as 17dB gain and a consumption as low as 180mA @30V. Designers can use the CHK8013-99F in Pulsed and operating modes. This product requires an external…
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A Monolithic Microwave Integrated Circuit, or MMIC is a type of integrated circuit (IC) device that operates at microwave frequencies (300 MHz to 300 GHz) and fabricated using gallium arsenide (GaAs), a III-V compound semiconductor. These devices typically perform functions such as microwave mixing, power amplification, low-noise amplification, and high-frequency switching. Inputs and outputs on MMIC…
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UMS new products: CHA2362-99F, very low noise Amplifier CHA6551-99F, highly linear Power Amplifier New GH25 PDK available New features are now available in our GH25 Design Kit. In this new version, UMS foundry team gives you access to : • Compatibility with thermal simulation tool “ETH” from Keysight, allowing complete electro-thermal simulation of your assembled…
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UMS (United Monolithic Semiconductors) announce 2 new S-band GaN High Power Amplifier: CHZ8012-QJA S-band 12W GaN High Power Amplifier Ref: CHZ8012-QJA-FULL-8323 The CHZ8012-QJA is an S-Band Quasi-MMIC Power Amplifier based on GaN power bar and GaAs input and output matching circuits. It is fabricated using UMS 0.25µm GaN on SiC and GaAs MMIC High Power UMS…
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The fifth generation (5G) communications technologies will provide internet access to a wide range of applications: from billions of low data rate sensors to high resolution video streaming. The 5G network is designed to scale across these different use cases and will use different radio access technologies for each one. To support very high data…
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The CHA6652-98F is a 3 stage 21-27.5GHz High Power Amplifier delivering 2W of output power. This product exhibits a very high linearity with 39dBm OIP3, a low consumption with 6V@1.3A and an excellent PAE of 25% (between 21-24GHz) and 18% (between 24.25-27.5GHz). As with the other Telecom PAs in this range, the CHA6652-98F features an…
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