UMS Foundry organises regular training for immediate design start ! Participants will get a clear understanding of the technology processes, design flow and techniques to realise effective designs using our latest toolkits. Course Objectives: The UMS foundry training course is the opportunity to access the complete GaAs and GaN MMIC design rules. Our course aims…
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Monolithic microwave integrated circuit, or MMIC is an Integrated Circuit (IC) device that operates at Microwave frequencies (300 MHz to 300 GHz). Perform functions such as High Power Amplifiers (HPA), Low-Noise Amplifiers (LNA) and Single Pole Double Throw (SPDT) Switch. MMICs are dimensionally small (from around 1 mm² to 10 mm²) and can be mass-produced,…
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UMS join the 2021 Mobile World Congress From 28th of June to 1st of July 2021, UMS participate to the MWC Discover UMS latest solutions for 5G and Satcom READ MORE … NIGAMIL a project to develop a European GaN source UMS is proud to have been entrusted by the French Defence Agency (DGA)…
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United Monolithic Semiconductors (UMS), European leader RF MMIC – Monolithic Microwave Integrated Circuit (GaAs, GaN, SiGe technologies) products and foundry services for Aerospace, Defence, Telecom, Automotive Radar and Industrial sensors. CHA8212-99F 25W X-Band High Power Amplifier Ref: CHA8212-99F-FULL-0358 (Ex AI1908) Product information: 25W X-Band GaN High Power Amplifier Very versatile amplifier 44dBm Pout @ 20dBm…
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The CHK8013-99F is a new GaN wideband capability transistor covering DC to 10GHz It exhibits 14W of power and a very good PAE of 70%. It enables as much as 17dB gain and a consumption as low as 180mA @30V. Designers can use the CHK8013-99F in Pulsed and operating modes. This product requires an external…
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A Monolithic Microwave Integrated Circuit, or MMIC is a type of integrated circuit (IC) device that operates at microwave frequencies (300 MHz to 300 GHz) and fabricated using gallium arsenide (GaAs), a III-V compound semiconductor. These devices typically perform functions such as microwave mixing, power amplification, low-noise amplification, and high-frequency switching. Inputs and outputs on MMIC…
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UMS announced the release of its new GaN HEMT 0.15µm technology during the EuMW show in Paris, GH15 is based on SiC substrate and is well-suited for a wide range of Military, Space and Telecom applications up to 35GHz. It enables the design of high power, high linearity and high PAE products. This technology exhibits…
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UMS new products: CHA2362-99F, very low noise Amplifier CHA6551-99F, highly linear Power Amplifier New GH25 PDK available New features are now available in our GH25 Design Kit. In this new version, UMS foundry team gives you access to : • Compatibility with thermal simulation tool “ETH” from Keysight, allowing complete electro-thermal simulation of your assembled…
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