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Tag: GaN

CHC6094-QKB, a 2W RF Front-End 37-41 GHz.

United Monolithic Semiconductors (UMS) continue product launch series with  CHC6094-QKB, a 2W RF Front-End 37-41 GHz. Product information: The CHC6094-QKB is a multi-function monolithic packaged front-end operating in 37-41GHz band with a low noise high linearity amplifier, input/output switches and a linear efficient High Power Amplifier. It suits well for 5G terrestrial networks, high-throughput Fixed Wireless Access and…
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CHA6354-QQA – 27.5-30GHz 4W HPA with SPDT

United Monolithic Semiconductors (UMS) continue product launch series with  CHA6354-QQA – 27.5-30GHz 4W HPA with SPDT. Product information: The CHA6354-QQA is a three stage monolithic GaN High Power Amplifier reaching 4W output power over 27.5-30GHz bandwidth. It includes a SPDT switch at the output. The CHA6354-QQA provides high linearity with low consumption. It is well suited…
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FOUNDRY INNOVATION BY UMS

UMS (United Monolithic Semiconductors) constantly innovate to make UMS open III-V foundry Technologies more and more efficient for customers, facilitating frequency rise and assembly in innovative ad-hoc solutions (BGA, etc.). Check out UMS new generations PH10-20 and PH25-20. Read More… United Monolithic Semiconductors Bât. Charmille – Parc Mosaic – 10, Avenue du Québec – 91140…
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CHA4252-QKB – a three stage GaN Power Amplifier 17.25 – 21.25GHz band

United Monolithic Semiconductors (UMS) announce the release of a new advanced information: CHA4252-QKB – a three stage GaN Power Amplifier in the 17.25 – 21.25GHz frequency band. Datasheet access for this AI: You can access our datasheet following this link Ref: AI24074140-CHA4252-Advanced Information Product information: UMS develops the CHA4252-QKB, a three-stage GaN Power Amplifier in…
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CHA8618-99F monolithic GaN High Power Amplifier 6‑18GHz

United Monolithic Semiconductors (UMS) released of a new datasheet / product CHA8618-99F 6-18GHz HPA. Datasheet access: You can access our datasheet following this link Or through UMS Online Product Finder Tool Ref: DSCHA861841012 Product information: The CHA8618-99F is a monolithic GaN High Power Amplifier in the frequency band 6‑18GHz with a control interface for fast…
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UMS CHA6682-QKB GaN HPA in QFN package

United Monolithic Semiconductors (UMS) – Advanced-Information CHA6682-QKB – HPA 24-27.5GHz 4W GaN Monolithic Microwave IC in QFN package The CHA6682-QKB is a three-stage GaN High Power Amplifier in the frequency band 24-27.5GHz. This HPA typically provides 4W output power associated to 26% of Power Added Efficiency. The circuit exhibits a typical small signal gain of…
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Wave SRL High-Quality products and services RF and Microwave

Wave SRL delivers High Quality products and consultancy services in the RF and Microwave field with more than 14 years of experience in the Defence, Telecom and Space markets. Wave SRL designs and manufactures both standard and custom RF and Microwave circuits: GaN Solid State Power Amplifiers for Radar, Jammers and Telecommunications; Transceivers for Datalinks…
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CHA6094-QKB: 35-42.5GHz 2W Packaged Power Amplifier

UMS (United Monolithic Semiconductors) relesed the CHA6094-QKB: 35-42.5GHz 2W Packaged Power Amplifier GaN Monolithic Microwave IC in SMD leadless package The CHA6094-QKB is a GaN packaged monolithic Power Amplifier operating in the 35-42.5GHz frequency range. It typically exhibits 33dBm saturated output power with 26dB small signal gain. The overall power supply is of 25V/150mA. It…
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