UMS CHA7452-99F a 35.5-40.5GHz GaN HPA

The CHA7452-99F is a 35.5-40.5GHz GaN HPA exhibiting 9W output power.

This product exhibits a high  PAE of 24%, 29dB Linear Gain and low consumption of 290mA @ 20V.  With its low biaising voltage, the CHA7452-99F maintains a junction temperature below 160°C even in saturation

The typical power supply is 20V/290mA (quiescent current). Thanks to a low drain voltage biasing, the CHA7452-99F provides a junction temperature below 160°C, even in saturation.

The circuit is manufactured on a space evaluated 0.15µm gate length GaN-on-SiC HEMT process and is available in bare die form.

It is firstly dedicated to space applications and well suited for a wide range of microwave applications and systems

Proposed in a die form, the CHA7452-99F has been designed on a UMS proprietary 0.15µm GaN technology.

Its features makes it an ideal candidate for your Space SATCOM projects in Q-Band and for all demanding microwave applications.

Main features

• Frequency range: 35.5 – 40.5 GHz
• High output power: 9 W
• High PAE: 24 %
• Linear Gain: 29 dB
• DC bias: Vd=20V @Id=290 mA
• Chip size: 3.6×2.9 mm
• Available in bare die form

READ MORE ON: www.ums-rf.com/