S-band GaN High Power Amplifier
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UMS (United Monolithic Semiconductors) announce 2 new S-band GaN High Power Amplifier:
CHZ8012-QJA
S-band 12W GaN High Power Amplifier
Ref: CHZ8012-QJA-FULL-8323
The CHZ8012-QJA is an S-Band Quasi-MMIC Power Amplifier based on GaN power bar and GaAs input and output matching circuits.
It is fabricated using UMS 0.25µm GaN on SiC and GaAs MMIC High Power UMS Passive technologies.
The CHZ8012-QJA is fully matched on 50 Ohms. It can be used following several operating conditions to meet system requirements. This product is dedicated to a wide range of applications, from military to commercial radar systems.
The part is proposed in low cost plastic package providing low parasitic and low thermal resistance. It is supplied in RoHS compliant SMD package.
Product information:
· Performance to highlight:
· 12W Output Power
· 52% PAE
· Low cost DFN package
· High thermal performance
· Short Description:
· 2.6-3.4GHz frequency band
· Pulsed operating mode
· DC bias: Vd up to 30V
CHZ9012-QFA
S-band 60W GaN High Power Amplifier
Ref: CHZ9012-QFA-FULL-8296
The CHZ9012-QFA is an S-Band Quasi-MMIC High Power Amplifier based on GaN power bar and GaAs input and output matching circuits.
It is fabricated using UMS 0.25µm GaN on SiC and GaAs MMIC High Power UMS Passive technologies.
The CHZ9012-QFA is fully matched on 50 Ohms. It can be used following several operating conditions to meet system requirements. This product is dedicated to a wide range of applications, from military to commercial radar systems.
The CHZ9012-QFA is proposed in low cost plastic package providing low parasitic and low thermal resistance. This product is supplied in RoHS compliant SMD package.
Product information:
· Performance to highlight:
· 60W Output power
· 50% PAE
· Low cost DFN package
· High thermal performance
· Short Description:
· 2.7-3.4GHz frequency band
· Pulsed operating mode
· DC bias: Vd up to 30V
· Compatible UMS driver: CHZ8012-QJA
