CHA8618-99F monolithic GaN High Power Amplifier 6‑18GHz

United Monolithic Semiconductors (UMS) released of a new datasheet / product CHA8618-99F 6-18GHz HPA.

Datasheet access:

• You can access our datasheet following this link
• Or through UMS Online Product Finder Tool
• Ref: DSCHA861841012

Product information:

The CHA8618-99F is a monolithic GaN High Power Amplifier in the frequency band 6‑18GHz with a control interface for fast switching. This driver provides 42.5 dBm of Output Power.

The circuit exhibits a small signal gain of 33dB. The overall power supply is of 20V/1.2A (quiescent current).

It is designed for a wide range of applications, for military systems, such as electronic warfare, and test instrumentation.

The part is manufactured on robust GaN HEMT technology and is available as a bare die.

Main Features:

• Broadband performances: 6-18GHz
• Linear Gain = 33dB
• Pout = 42.5dBm for +23dBm Input Power
• Id associated current = 3.6A
• DC bias: Vd=20V @Idq = 1.2A
• 3.6×5.6mm²

United Monolithic Semiconductors
Bât. Charmille – Parc Mosaic – 10, Avenue du Québec – 91140 VILLEBON-SUR-YVETTE – France
Tel.: +33 (0) 1 69 86 32 00 – www.ums-rf.com

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