CHA6262-99F – 17.3-21.5GHz 4W GaN Power Amplifier
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The CHA6262-99F from UMS is a three-stage GaN High Power Amplifier operating in the frequency band 17.3-21.5GHz.
This HPA typically provides 4W output power associated to 36% of Power Added Efficiency.
The circuit exhibits a typical small signal gain of 30dB. The overall power supply is 18V/182mA.
This HPA is dedicated to Space applications and well suited for a wide range of microwave applications and systems.
The product is developed on a robust 0.15µm gate length GaN on SiC HEMT process and is available as a bare die.
Main Features :
■ 17.3-21.5GHz frequency range
■ Linear gain is 30 dB
■ Pout=36dBm for Pin=14dBm
■ NPR > 17dB for Pout = 2Watts
■ PAE=36% at Psat
■ DC bias: Vd=18Volts @ Idq=182mA
■ Chip size : 3.55mmx2.24mm
United Monolithic Semiconductors (UMS), European leader in RF MMIC – Monolithic Microwave Integrated Circuit (GaAs, GaN, SiGe technologies) Products and Foundry services for Aerospace, Defence, Telecom, Automotive Radar and Industrial sensors.
Contact for ITALY Representative & Business Development : Mr. DANILO LAUTA
MICROREL – Via Guido Rossa 34, CP.00065 – Fiano Romano, ROME, ITALY
Email: danilo.lauta@microrel.com
Phone : +39 334 9529414
Web: www.microrel.com
MICROREL – Via Guido Rossa 34, CP.00065 – Fiano Romano, ROME, ITALY
Email: danilo.lauta@microrel.com
Phone : +39 334 9529414
Web: www.microrel.com
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