UMS (United Monolitichs Semiconductors) develops its state of the art LNA offer with the CHA2595-QDG a new wideband and very low noise LNA covering 4 telecom bands. This 27.5-43.5GHz LNA exhibits very low noise @ 2.3dB and low consumption at 3.3V@61mA. It is proposed in a low cost 4x4mm2 QFN plastic package. This circuit…
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The CHK8013-99F is a new GaN wideband capability transistor covering DC to 10GHz It exhibits 14W of power and a very good PAE of 70%. It enables as much as 17dB gain and a consumption as low as 180mA @30V. Designers can use the CHK8013-99F in Pulsed and operating modes. This product requires an external…
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A Monolithic Microwave Integrated Circuit, or MMIC is a type of integrated circuit (IC) device that operates at microwave frequencies (300 MHz to 300 GHz) and fabricated using gallium arsenide (GaAs), a III-V compound semiconductor. These devices typically perform functions such as microwave mixing, power amplification, low-noise amplification, and high-frequency switching. Inputs and outputs on MMIC…
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UMS announced the release of its new GaN HEMT 0.15µm technology during the EuMW show in Paris, GH15 is based on SiC substrate and is well-suited for a wide range of Military, Space and Telecom applications up to 35GHz. It enables the design of high power, high linearity and high PAE products. This technology exhibits…
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UMS new products: CHA2362-99F, very low noise Amplifier CHA6551-99F, highly linear Power Amplifier New GH25 PDK available New features are now available in our GH25 Design Kit. In this new version, UMS foundry team gives you access to : • Compatibility with thermal simulation tool “ETH” from Keysight, allowing complete electro-thermal simulation of your assembled…
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The CHT3091-FAA is a wide-band internally matched DC-14GHz attenuator in a 6x6mm SMD hermetic ceramic package. This circuit features 15dBm typical input power @ 1dB compression (any attenuation between 1 and 14GHz) and 20dB dynamic range. It has 2dB insertion loss. This product is designed on an internal GaAs 0.7µm MESFET process (Space evaluated by…
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UMS (United Monolithic Semiconductors) announce 2 new S-band GaN High Power Amplifier: CHZ8012-QJA S-band 12W GaN High Power Amplifier Ref: CHZ8012-QJA-FULL-8323 The CHZ8012-QJA is an S-Band Quasi-MMIC Power Amplifier based on GaN power bar and GaAs input and output matching circuits. It is fabricated using UMS 0.25µm GaN on SiC and GaAs MMIC High Power UMS…
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The fifth generation (5G) communications technologies will provide internet access to a wide range of applications: from billions of low data rate sensors to high resolution video streaming. The 5G network is designed to scale across these different use cases and will use different radio access technologies for each one. To support very high data…
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