The CHT3091-FAA is a wide-band internally matched DC-14GHz attenuator in a 6x6mm SMD hermetic ceramic package. This circuit features 15dBm typical input power @ 1dB compression (any attenuation between 1 and 14GHz) and 20dB dynamic range. It has 2dB insertion loss. This product is designed on an internal GaAs 0.7µm MESFET process (Space evaluated by…
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UMS (United Monolithic Semiconductors) announce 2 new S-band GaN High Power Amplifier: CHZ8012-QJA S-band 12W GaN High Power Amplifier Ref: CHZ8012-QJA-FULL-8323 The CHZ8012-QJA is an S-Band Quasi-MMIC Power Amplifier based on GaN power bar and GaAs input and output matching circuits. It is fabricated using UMS 0.25µm GaN on SiC and GaAs MMIC High Power UMS…
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The fifth generation (5G) communications technologies will provide internet access to a wide range of applications: from billions of low data rate sensors to high resolution video streaming. The 5G network is designed to scale across these different use cases and will use different radio access technologies for each one. To support very high data…
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The CHA6652-98F is a 3 stage 21-27.5GHz High Power Amplifier delivering 2W of output power. This product exhibits a very high linearity with 39dBm OIP3, a low consumption with 6V@1.3A and an excellent PAE of 25% (between 21-24GHz) and 18% (between 24.25-27.5GHz). As with the other Telecom PAs in this range, the CHA6652-98F features an…
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United Monolithic Semiconductors (UMS), European leader in RF MMIC products and foundry services for specialised markets, including Defence and Space, Telecommmunications, Automotive Radar and Industrial sensors, is pleased to announce the release of HV1203-FAA self-biased, fully integrated S Band HBT Voltage Controlled Oscillator compatible with space derating. This product is supplied in an hermetic metal…
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UMS is proud to announce that the GH25-10 MMIC GaN HEMT technology is successfully space evaluated and now part of the European Preferred Part list (EPPL) established by the European Space Agency ESA https://escies.org/download/ The reliability study and ESCC evaluation of the technology have been supported by ESA, French MoD and CNES. This GaN 0.25µm…
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The CHV1203-98F and CHV1206-98F are 2 fully integrated VCOs including negative resistor, varactors and buffer amplifiers. They exhibit high frequency stability and have been designed with space de-rating. Although designed for space, they are suitable for a wide range of applications including commercial communication systems. These circuits are manufactured using a 2µm InGaP HBT process.…
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