UMS will be present @ the EuMW 2020 edition which held on line from the 10th to the 15th of January. UMS will be pleased to welcome you on our virtual booth (Exhibit Hall 4) and exchange with you on our latest solutions and innovations. UMS will also contribute to the EuMW event with the…
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United Monolithic Semiconductors (UMS) – European leader in RF MMIC – Monolithic Microwave Integrated Circuit (GaAs, GaN, SiGe technologies) publishes a 6-bit digital X-Band phase shifter, the CHP4010-99F (7-9GHz). This product is proposed in bare die. The CHP4010-99F circuit exhibits a high phase accuracy with a RMS phase error of 1.5°, a phase shift range…
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United Monolithic Semiconductors (UMS) RF MMIC – Monolithic Microwave (GaAs, GaN, SiGe) products and foundry services announce the release of : CHA3409-98F a new wideband driver UMS new CHA3409-98F is a 25-45GHz wideband driver including self-biasing to reduce temperature impact The CHA3409-98F exhibits and excellent PAE of 19% @ 1dBcomp with 19dBm Pout, a high linear gain…
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UMS (United Monolitichs Semiconductors) develops its state of the art LNA offer with the CHA2595-QDG a new wideband and very low noise LNA covering 4 telecom bands. This 27.5-43.5GHz LNA exhibits very low noise @ 2.3dB and low consumption at 3.3V@61mA. It is proposed in a low cost 4x4mm2 QFN plastic package. This circuit…
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The CHK8013-99F is a new GaN wideband capability transistor covering DC to 10GHz It exhibits 14W of power and a very good PAE of 70%. It enables as much as 17dB gain and a consumption as low as 180mA @30V. Designers can use the CHK8013-99F in Pulsed and operating modes. This product requires an external…
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A Monolithic Microwave Integrated Circuit, or MMIC is a type of integrated circuit (IC) device that operates at microwave frequencies (300 MHz to 300 GHz) and fabricated using gallium arsenide (GaAs), a III-V compound semiconductor. These devices typically perform functions such as microwave mixing, power amplification, low-noise amplification, and high-frequency switching. Inputs and outputs on MMIC…
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UMS announced the release of its new GaN HEMT 0.15µm technology during the EuMW show in Paris, GH15 is based on SiC substrate and is well-suited for a wide range of Military, Space and Telecom applications up to 35GHz. It enables the design of high power, high linearity and high PAE products. This technology exhibits…
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UMS new products: CHA2362-99F, very low noise Amplifier CHA6551-99F, highly linear Power Amplifier New GH25 PDK available New features are now available in our GH25 Design Kit. In this new version, UMS foundry team gives you access to : • Compatibility with thermal simulation tool “ETH” from Keysight, allowing complete electro-thermal simulation of your assembled…
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