UMS launched GH15 GaN technology
UMS announced the release of its new GaN HEMT 0.15µm technology during the EuMW show in Paris, GH15 is based on SiC substrate and is well-suited for a wide range of Military, Space and Telecom applications up to 35GHz. It enables the design of high power, high linearity and high PAE products. This technology exhibits…
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