CHA8262-99F, the New UMS GaN HPA

CHA8262-99F, the New UMS GaN HPA

The CHA8262-99F is a new UMS GaN HPA covering 27.5-31.5GHz and exhibiting at Psat an excellent Pout of 41dBm and an excellent PAE of 25%.

This HPA also features a high linear gain of 24dB and a low consumption of 20V @ 280mA.

It benefits from a large operating range from -40°C to 105°C.

The CHA8262-99F is mainly dedicated to satcom uplink and 5G applications.

This product is designed on a UMS proprietary 0.15µm GaN on Sic technology.

The CHA82562-99F is proposed in die format

Main features

• Frequency range: 27.5-31.5GHz
• Linear gain: 24dB
• PAE: 25% @ Psat
• Psat > 41dBm
• Operating Temperature range: -40 to 105°C
• Low consumption: 20V @ 280mA
• Input Return Loss: -10dB
• Output Return Loss: -8dB

United Monolithic Semiconductors (UMS), European leader in RF MMIC – Monolithic Microwave Integrated Circuit (GaAs, GaN, SiGe technologies) Products and Foundry services for Aerospace, Defence,  Telecom, Automotive Radar and Industrial sensors.

Download Datasheet CHA8262-99F

More info HERE

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