UMS CHA8212-99F & CHT4660-FAB

United Monolithic Semiconductors (UMS), European leader RF MMIC – Monolithic Microwave Integrated Circuit (GaAs, GaN, SiGe technologies) products and foundry services for Aerospace, Defence, Telecom, Automotive Radar and Industrial sensors.

CHA8212-99F

25W X-Band High Power Amplifier

Ref: CHA8212-99F-FULL-0358  (Ex AI1908)

Product information:

• 25W X-Band GaN High Power Amplifier
• Very versatile amplifier
• 44dBm Pout @ 20dBm Pin
• 36% PAE @ 20dBm Pin
• Designed for defence applications and a wide range of microwave applications and systems

• Short Description:

• • Frequency range: 8.5-11.5GHz
  • Linear Gain: 34dB over 3 stage
  • Product proposed in bare die
  • DC bias: 28V @ 0.84A

Competition:

• Qorvo: TGA2238

Datasheet DOWNLOAD : CHA8212-99F-Full-0358

CHT4660-FAB

0.5-16GHz Variable attenuator

Ref: CHT4660-FAB-FULL-0358

Product information:

• Wideband 0.5-16GHz Variable attenuator
• Fully hermetic metal ceramic 6x6mm2 package
• Very good P-1dB: 27dBm
• Very high dynamic range: 35dB
• very small temperature performance variation from -40°C to 85°C for all frequency and attenuation states.
• Manufactured on a very linear 0.7µm space evaluated MESFET process
• Designed for space, defence and commercial communication systems.

• Short Description:

• • • Input Return loss (any att.): -10dB typical
    • Ouput Return loss (any att.): -10dB typical
    • DC bias: -5V<V1<0V, 5V<V2<0V

• Competition:

  • • •  Analog Devices: HMC346ALC3B

Datasheet DOWNLOAD : CHT4660-FAB-Full-0358

Contact Info :